MT53D1024M32D4DT-046 vs MT53D512M32D2DS-053 WT:D Comparación
Comparación detallada lado a lado de MT53D1024M32D4DT-046 por Micron Technology y MT53D512M32D2DS-053 WT:D por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Micron Technology
MT53D1024M32D4DT-046 - 32Gbit LPDDR4 DRAM 2.133GHz | Micron
MT53D1024M32D4DT-046 ✓ ActivoMicron Technology
MT53D512M32D2DS-053 WT:D - 16Gb LPDDR4 SDRAM | Micron
MT53D512M32D2DS-053 WT:D ✓ ActivoComparación de especificaciones
| Parámetro | MT53D1024M32D4DT-046 | MT53D512M32D2DS-053 WT:D |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $21,15 | $6,05 |
| Tipo de memoria | SDRAM - Mobile LPDDR4 | SDRAM - Mobile LPDDR4 |
| Tamaño de memoria | 32 Gbit (4 GB) | 16 Gbit (2 GB) |
| Organización de memoria | 1G x 32 | 512M x 32 |
| Clock Frequency | 2.133 GHz (4266 MT/s) | — |
| Interfaz | LPDDR4 (unified LPDDR4/LPDDR4X die) | — |
| Supply Voltage VDD2/VDDQ | 1.1 V (LPDDR4 mode) | — |
| LPDDR4X VDDQ | 0.60 V (LPDDR4X mode) | — |
| Encapsulado | 200-VFBGA (10 mm x 14.5 mm) | 200-WFBGA (10 mm x 14.5 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Características | Built-in temperature sensor, auto precharge, write leveling, ZQ calibration, asynchronous reset, data mask | Auto self-refresh, built-in temperature sensor, auto precharge, write leveling, ZQ calibration, asynchronous reset, data mask |
| Operating Temperature (WT:D) | -40C to +95C | — |
| Operating Temperature (AAT:D) | -40C to +105C | — |
| Grade | WT:D (standard), AAT:D (automotive/industrial), AIT:D (automotive) | — |
| Access Type | Synchronous, 8n prefetch, burst length 16 | — |
| Estado RoHS | Compliant | RoHS Compliant (per DigiKey listing) |
| Auto Precharge | Yes | — |
| Refresh | Self-refresh with per-bank refresh support | Auto refresh and self refresh |
| Clock Frequency / Data Rate | — | 1.866 GHz (1866 MT/s) |
| Die Configuration | — | DDP (Double Die Package) |
| Temperatura de funcionamiento | — | -40C to +85C |
| Speed Grade | — | -053 |
| Ancho del bus de datos | — | 32 bit |
| Memory Interface | — | Parallel, LPDDR4 |
| Self-Refresh | — | Auto self-refresh with temperature-compensated refresh |
| Tensión de alimentación | — | [DATA_NEEDED: VDD/VDDQ supply voltage] |